2sa1416 / 2sc3646 no.2005-1/5 features adoption of fbet, mbit processes. high breakdown voltage and large current capacity. fast switching speed. ultrasmall size making it easy to provide high-density, small-sized hybrid ic s. specifications ( ) : 2sa1416 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--)120 v collector-to-emitter voltage v ceo (--)100 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)1 a collector current (pulse) i cp (--)2 a collector dissipation p c 500 mw mounted on a ceramic board (250mm 2 ? 0.8mm) 1.3 w junction temperature tj 150 c storage temperature tstg --55 to +150 c marking 2sa1416 : ab 2sc3646 : cb www.semiconductor-sanyo.com/network ordering number : en2005b 31010ea tk im / o3103tn (kt)/71598ha (kt)/3277ki/n255mw, ts specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. sanyo semiconductors data sheet 2sa1416 / 2sc3646 pnp / npn epitaxial planar silicon transistors high-voltage switching applications
2sa1416 / 2sc3646 no.2005-2/5 electrical characteristics at ta=25 c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =(--)100v, i e =0a (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)100 na dc current gain h fe v ce =(--)5v, i c =(--)100ma 100* 400* gain-bandwidth product f t v ce =(--)10v, i c =(--)100ma 120 mhz output capacitance cob v cb =(--)10v, f=1mhz (13)8.5 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)400ma, i b =(--)40ma (--0.2)0.1 (--0.6)0.4 v base-to-emitter saturation voltage v be (sat) i c =(--)400ma, i b =(--)40ma (--)0.85 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 (for pnp, the polarity is reversed) p
2sa1416 / 2sc3646 no.2005-3/5 i c -- v ce i c -- v ce i c -- v ce i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- a collector-to-emitter voltage, v ce -- v collector current, i c -- ma collector-to-emitter voltage, v ce -- v collector current, i c -- ma h fe -- i c h fe -- i c collector current, i c -- a dc current gain, h fe collector current, i c -- a dc current gain, h fe i c -- v be i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a base-to-emitter voltage, v be -- v collector current, i c -- a itr03526 0--2 -- 1 -- 4 --3 --5 2 14 35 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 0 --100 --300 --200 --400 --500 0.2 0.4 0.6 0.8 1.0 0 100 300 200 400 500 0 itr03527 10 20 30 40 50 0 itr03529 itr03528 -- 40 -- 30 -- 50 -- 10 -- 20 0 --15 ma --20 ma --30 ma --25 ma --10 ma -- 5 ma -- 3 ma -- 2 ma -- 1 ma i b =0 ma 2sa1416 2sc3646 2sc3646 i b =0 ma i b =0 ma 2sa1416 15 ma 20 ma 30 ma 25 ma 10 ma 5 ma 3 ma 2 ma 1 ma --2.5 ma --2.0 ma --1.5 ma --1.0 ma -- 0 . 5 ma i b =0 ma 0.5 ma 2.5 ma 2.0 ma 1.5 ma 1.0 ma itr03533 itr03532 itr03530 57 73 2 -- 0.01 -- 0.1 57 3 23 2 -- 1.0 -- 0.4 -- 0.2 0 -- 0.6 -- 0.8 -- 1.2 -- 1.0 0.4 0.2 0 0.6 0.8 1.2 1.0 10 100 1000 5 7 3 2 5 7 3 2 57 73 2 0.01 0.1 57 3 23 2 1.0 10 100 1000 5 7 3 2 5 7 3 2 -- 0.6 -- 0.8 0 -- 0.4 -- 0.2 -- 1.0 -- 1.2 0.6 0.8 0 0.4 0.2 1.0 1.2 itr03531 2sa1416 v ce = -- 5v 2sc3646 v ce =5v 2sa1416 v ce = -- 5v 2sc3646 v ce =5v -- 25 c 25 c ta=75 c -- 25 c 25 c ta=75 c -- 25 c 25 c ta=75 c -- 25 c 25 c ta=75 c
2sa1416 / 2sc3646 no.2005-4/5 f t -- i c cob -- v cb collector current, i c -- a gain-bandwidth product, f t -- mhz collector-to-base voltage, v cb -- v output capacitance, cob -- pf a s o p c -- ta collector current, i c -- a collector-to-emitter voltage, v ce -- v collector dissipation, p c -- w ambient temperature, ta -- c v ce (sat) -- i c v ce (sat) -- i c collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- a collector-to-emitter saturation voltage, v ce (sat) -- mv v be (sat) -- i c v be (sat) -- i c collector current, i c -- a collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v base-to-emitter saturation voltage, v be (sat) -- v itr03534 10 3 100 5 7 2 3 2 0.01 3 0.1 5 7 5 7 2 3 1.0 5 5 7 2 3 2 7 0.01 0.1 57 3 2 1.0 57 3 2 7 1.0 53 22 10 100 5 3 7 2 5 3 7 2 0 0.2 0.5 0.4 0.6 0.8 1.6 1.3 1.4 1.2 1.0 7 1.0 10 57 3 257 3 2 100 2 0 20 80 100 60 40 160 140 120 itr03535 itr03540 mounted on a ceramic board (250mm 2 0.8mm) no heat sink 7 10 53 27 100 5 itr03541 2sa1416 / 2sc3646 2sa1416 / 2sc3646 f= 1mhz 2sa1416 2sc3646 2sa1416 2sc3646 2sa1416 / 2sc3646 v ce =10v 1 ms 10 ms 100 m s dc operation for pnp, minus sign is omitted 2sa1416 / 2sc3646 single pulse ta=25 c mounted on a ceramic board (250mm 2 0.8mm) i cp =2 a i c =1 a itr03539 itr03538 2 -- 0.01 57 73 2 2 -- 0.1 57 3 -- 1.0 2 -- 0.01 -- 0.1 57 73 2 2 -- 1.0 57 32 0.01 0.1 57 73 2 2 1.0 57 3 -- 1.0 -- 10 2 3 5 7 3 5 7 2 0.01 57 73 2 2 0.1 57 3 1.0 1.0 10 2 3 5 7 3 5 7 -- 1000 -- 100 2 3 5 7 2 3 5 7 itr03536 100 2 3 5 7 1000 2 3 5 7 itr03537 2sc3646 i c / i b =10 2sa1416 i c / i b =10 2sa1416 i c / i b =10 75 c 25 c ta= -- 25 c -- 25 c 25 c 75 c 25 c ta= -- 25 c 2sc3646 i c / i b =10 ta=75 c -- 25 c 25 c ta=75 c for pnp, minus sign is omitted for pnp, minus sign is omitted
2sa1416 / 2sc3646 no.2005-5/5 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party?s intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps this catalog provides information as of march, 2010. specifications and information herein are subject to change without notice.
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